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| Si4539ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V 0.053 @ VGS = - 10 V ID (A) 5.9 4.9 - 4.9 - 3.7 P-Channel P Channel - 30 0.090 @ VGS = - 4.5 V D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4539ADY Si4539ADY-T1 (with Tape and Reel) S1 N-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.7 2.0 1.3 0.9 1.1 0.7 - 55 to 150 P-Channel 10 secs Steady State - 30 "20 V - 3.7 - 2.9 A - 1.7 2 1.3 - 0.9 1.1 0.7 W _C Symbol VDS VGS 10 secs Steady State 30 "20 Unit 5.9 4.7 4.4 3.6 30 - 4.9 - 3.9 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71131 S-03951--Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF P-Channel Typ 52 90 32 Symbol Typ 50 90 32 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W C/W 2-1 Si4539ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = - 24 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta VDS w 5 V, VGS = 10 V ID( ) D(on) VDS p - 5 V, VGS = - 10 V VGS = 10 V, ID = 5.9 A Drain-Source On-State Drain Source On State Resistancea VGS = - 10 V, ID = - 4.9 A rDS( ) DS(on) VGS = 4.5 V, ID = 4.9 A VGS = - 4.5 V, ID = - 3.7 A Forward Transconductancea VDS = 15 V, ID = 5.9 A gf fs VDS = - 15 V, ID = - 4.9 A IS = 1.7 A, VGS = 0 V VSD IS = - 1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 - 30 0.032 0.043 0.042 0.075 15 9 0.80 - 0.80 1.2 - 1.2 V S 0.036 0.053 0.053 0.090 W A 1.0 V - 1.0 "100 "100 1 -1 5 -5 mA nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 15 V VGS = 10 V, ID = 5.9 A V, V 59 P-Channel P Channel VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A P-Ch N-Ch P-Ch N-Ch Gate-Drain Gate Drain Charge Qgd d P-Ch N-Ch Gate Resistance Rg P-Ch N-Ch Turn-On Turn On Delay Time td( ) d(on) N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P Channel P-Channel VDD = - 15 V, RL = 1 W 1V 15 ID ^ - 1 A, VGEN = - 10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.7 A, di/dt = 100 A/ms trr IF = - 1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.5 5 6 7 14 10 30 40 5 20 30 30 13 15 2.3 nC 4 2 2.0 2.2 12.6 12 15 25 20 60 80 10 40 60 60 ns W 20 25 Gate-Source Gate Source Charge Qgs Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71131 S-03951--Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) 4V I D - Drain Current (A) 24 30 TC = - 55_C 25_C NCHANNEL Transfer Characteristics 18 18 125_C 12 12 6 3V 6 2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 1000 Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V C - Capacitance (pF) 800 Ciss 600 400 0.02 200 Crss 0.00 0 6 12 18 24 30 0 0 6 12 Coss 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.9 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.9 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71131 S-03951--Rev. B, 26-May-03 www.vishay.com 2-3 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S - Source Current (A) 0.08 NCHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 5.9 A 0.06 10 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W) 40 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71131 S-03951--Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 NCHANNEL 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 7 V 24 5V I D - Drain Current (A) 18 I D - Drain Current (A) 18 6V 24 30 PCHANNEL Transfer Characteristics TC = - 55_C 25_C 125_C 12 12 4V 6 3V 0 0.0 6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 1500 Capacitance 0.15 C - Capacitance (pF) 1200 Ciss 900 0.10 VGS = 4.5 V 600 Coss VGS = 10 V 0.05 300 Crss 0.00 0 6 12 18 24 30 ID - Drain Current (A) Document Number: 71131 S-03951--Rev. B, 26-May-03 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 4.9 A 8 1.6 VGS = 10 V ID = 4.9 A 1.4 PCHANNEL On-Resistance vs. Junction Temperature 6 r DS(on) - On-Resistance (W) (Normalized) 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.40 0.35 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.30 0.25 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.9 A TJ = 25_C 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 50 Single Pulse Power 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 40 30 0.2 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) www.vishay.com 2-6 Document Number: 71131 S-03951--Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PCHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71131 S-03951--Rev. B, 26-May-03 www.vishay.com 2-7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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